Dielectric Breakdown In Ultra-Thin Hf Based Gate Stacks: A Resistive Switching Phenomenon
نویسندگان
چکیده
منابع مشابه
Reversible dielectric breakdown in ultrathin Hf based high-k stacks under current-limited stresses
The effects of a current-limited breakdown (BD) on the post-BD current of MOS capacitors with a thin high-k dielectric stack have been analysed. A strong current reduction after BD and, consequently, a partial recovery of the insulating properties of the dielectric stack is observed. The similarities with the Resistive Switching phenomenon observed in MIM structures for memory applications are ...
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ژورنال
عنوان ژورنال: Journal of The Electrochemical Society
سال: 2012
ISSN: 0013-4651,1945-7111
DOI: 10.1149/2.012206jes